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IRF7822PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 18A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7822PbF is a single N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of 30V and a continuous drain current of 18A at 25°C, dropping to 13A at 70°C. The device has a maximum on-resistance of 6.5mΩ at VGS=4.5V and ID=15A. Total gate charge is 44nC (cont FET) and 38nC (sync FET). Power dissipation is 3.1W at 25°C. Junction temperature range is -55°C to 150°C.
Verify the component matches the exact part number IRF7822PbF or IRF7822PBF. Confirm the manufacturer is Infineon Technologies or International Rectifier. Check datasheet revision dates as specifications may change. Ensure the package is SO-8 and the device is lead-free compliant. Cross-reference ordering suffixes carefully.
Select this MOSFET for low-voltage, high-current synchronous buck applications. Consider the 30V rating and 18A current capability. Evaluate thermal performance based on PCB copper area. Compare gate charge values against driver capabilities. Verify operating temperature requirements against the -55°C to 150°C range.
The IRF7822 is part of the HEXFET family from Infineon/IR. It is designed specifically for CPU core power delivery. The SO-8 package allows for surface mount assembly. It targets high-efficiency power stages where low RDS(on) and fast switching are critical.
Check for direct replacements like IRF7822TRPBF for tape-and-reel packaging. Verify pinout compatibility if substituting with other 30V SO-8 MOSFETs. Ensure thermal resistance and gate charge parameters meet design requirements.
The total gate charge for the synchronous FET is typically 38nC when measured at VGS=5.0V and VDS<100mV.
Yes, it offers particularly high Cdv/dt-induced turn-on immunity, making it ideal for synchronous FET applications.
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