Single FETs, MOSFETs IRF7822PBF product image

IRF7822PBF

  • Description:MOSFET N-CH 30V 18A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:fe87a1cb12dd Category: Brand:

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IRF7822PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 18A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7822PBF

  • Description:MOSFET N-CH 30V 18A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 16 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF7822PBF

IRF7822PBF

Single FETs, MOSFETs Overview

The IRF7822PbF is a single N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of 30V and a continuous drain current of 18A at 25°C, dropping to 13A at 70°C. The device has a maximum on-resistance of 6.5mΩ at VGS=4.5V and ID=15A. Total gate charge is 44nC (cont FET) and 38nC (sync FET). Power dissipation is 3.1W at 25°C. Junction temperature range is -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Optimized for synchronous buck converters with low conduction and switching losses
  • High Cdv/dt-induced turn-on immunity for synchronous FET applications
  • Advanced HEXFET technology balancing on-resistance and gate charge

Single FETs, MOSFETs Applications

  • CPU core DC-DC converters
  • High efficiency DC-DC converters powering microprocessors
  • Synchronous rectification in non-isolated converters

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number IRF7822PbF or IRF7822PBF. Confirm the manufacturer is Infineon Technologies or International Rectifier. Check datasheet revision dates as specifications may change. Ensure the package is SO-8 and the device is lead-free compliant. Cross-reference ordering suffixes carefully.

Single FETs, MOSFETs Selection Notes

Select this MOSFET for low-voltage, high-current synchronous buck applications. Consider the 30V rating and 18A current capability. Evaluate thermal performance based on PCB copper area. Compare gate charge values against driver capabilities. Verify operating temperature requirements against the -55°C to 150°C range.

Single FETs, MOSFETs Part Context

The IRF7822 is part of the HEXFET family from Infineon/IR. It is designed specifically for CPU core power delivery. The SO-8 package allows for surface mount assembly. It targets high-efficiency power stages where low RDS(on) and fast switching are critical.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements like IRF7822TRPBF for tape-and-reel packaging. Verify pinout compatibility if substituting with other 30V SO-8 MOSFETs. Ensure thermal resistance and gate charge parameters meet design requirements.

Single FETs, MOSFETs FAQ

What is the typical gate charge for the synchronous FET mode?

The total gate charge for the synchronous FET is typically 38nC when measured at VGS=5.0V and VDS<100mV.

Is the IRF7822 suitable for high dv/dt environments?

Yes, it offers particularly high Cdv/dt-induced turn-on immunity, making it ideal for synchronous FET applications.

IRF7822PBFIRF7822PBF

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