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IRF7901D1TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.2A 8SO. Review the specifications below when checking this part for your BOM.
The IRF7901D1TR is a dual N-channel power MOSFET array manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.2A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 38 milliohms at Vgs=10V. Packaged in a lead-free SO-8 surface-mount case, it operates within a junction temperature range of -55°C to +150°C. The component belongs to the HEXFET family and is designed for efficient switching applications.
Verify the specific suffix D1TR against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status as historical data may vary by production batch. Check for obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.
Select this component when a compact dual N-channel solution is required for low-voltage switching. Ensure the thermal management design accommodates the SO-8 package's thermal resistance. Verify that the gate drive voltage meets the logic-level threshold requirements for full enhancement.
This part is part of the IRF79xx series of dual MOSFET arrays from Infineon. These devices are engineered to replace discrete transistor pairs, reducing board space and parasitic inductance. The IRF7901D1TR specifically targets applications requiring two matched N-channel switches in a small footprint.
Consult official cross-reference tools for verified substitutes. Potential alternatives include other dual N-channel MOSFETs with similar 30V ratings and SO-8 packaging, such as the IRF7905 or IRF7907, provided pin compatibility and electrical parameters align.
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