FET, MOSFET Arrays IRF7901D1TR product image

IRF7901D1TR

$0.48
  • Description:MOSFET 2N-CH 30V 6.2A 8SO
  • Series:FETKY™

SKU:00bf66f4adb4 Category: Brand:

  
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IRF7901D1TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 6.2A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7901D1TR

  • Description:MOSFET 2N-CH 30V 6.2A 8SO
  • Series:FETKY™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.2A
  • Rds On (Max) @ Id, Vgs:38mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:780pF @ 16V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7901D1TR

IRF7901D1TR

FET, MOSFET Arrays Overview

The IRF7901D1TR is a dual N-channel power MOSFET array manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.2A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 38 milliohms at Vgs=10V. Packaged in a lead-free SO-8 surface-mount case, it operates within a junction temperature range of -55°C to +150°C. The component belongs to the HEXFET family and is designed for efficient switching applications.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration integrated into a single package for space-efficient circuit design
  • Logic-level gate drive capability enabling direct interface with standard logic outputs
  • Low on-resistance characteristic optimized for minimizing conduction losses in power paths

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification stages
  • Motor control bridge circuits
  • Power distribution management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix D1TR against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status as historical data may vary by production batch. Check for obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching. Ensure the thermal management design accommodates the SO-8 package's thermal resistance. Verify that the gate drive voltage meets the logic-level threshold requirements for full enhancement.

FET, MOSFET Arrays Part Context

This part is part of the IRF79xx series of dual MOSFET arrays from Infineon. These devices are engineered to replace discrete transistor pairs, reducing board space and parasitic inductance. The IRF7901D1TR specifically targets applications requiring two matched N-channel switches in a small footprint.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Potential alternatives include other dual N-channel MOSFETs with similar 30V ratings and SO-8 packaging, such as the IRF7905 or IRF7907, provided pin compatibility and electrical parameters align.

IRF7901D1TRIRF7901D1TR
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