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IRF810 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is MOSFET N-CH 500V 8A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF810
- Description：MOSFET N-CH 500V 8A
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF810
FET, MOSFET Arrays Overview
The IRF810 is a single N-channel HEXFET power MOSFET manufactured by Harris Corporation. It features an SO-8 surface-mount package and operates with a maximum drain-source voltage of 500 V. The device supports a continuous drain current of 4.5 A at 25°C and delivers a maximum on-resistance of 3.0 Ω at a gate drive of 10 V. Thermal performance includes a junction-to-case thermal resistance of 3.9 K/W and a maximum junction temperature rating of 175°C.
FET, MOSFET Arrays Feature Summary
- High-voltage capability suitable for demanding switching applications
- Low on-resistance optimized for efficient power conduction
- Surface-mount construction facilitating automated assembly
FET, MOSFET Arrays Applications
- High-voltage DC-to-DC converter circuits
- Power switching modules
- Motor control systems
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer origin, as Harris Corporation's semiconductor assets were acquired by International Rectifier and subsequently Infineon. Confirm that the specific part number corresponds to the original Harris production or the authorized successor documentation. Ensure datasheet revisions match the required specifications before procurement.
FET, MOSFET Arrays Selection Notes
Select this component when high blocking voltage is required in a compact surface-mount form factor. Evaluate the thermal derating curves to ensure the 4.5 A current rating remains valid under operating conditions. Compare the 3.0 Ω on-resistance against alternative packages to balance conduction losses with physical footprint constraints.
FET, MOSFET Arrays Part Context
This component belongs to the HEXFET family of power MOSFETs, characterized by planar stripe technology for low on-resistance. The IRF810 specifically addresses applications requiring robust high-voltage handling within standard industrial and commercial power supply architectures.
FET, MOSFET Arrays Replacement Considerations
Check for equivalents from Infineon or Vishay, which hold the rights to the former Harris/IR line. Verify pinout compatibility and thermal resistance values when substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
