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IRF820S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 2.5A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF820S
- Description：MOSFET N-CH 500V 2.5A D2PAK
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF820S
Single FETs, MOSFETs Overview
The IRF820S is a third-generation N-channel power MOSFET from Vishay Siliconix, housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 500 V and a continuous drain current of 2.5 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 3.0 Ω at VGS = 10 V and a total gate charge of 24 nC. Thermal performance includes a junction-to-case resistance of 2.5 °C/W and a maximum power dissipation of 50 W at 25 °C. Operating temperatures range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Fast switching capability with dynamic dV/dt rating
- Repetitive avalanche rated for ruggedized operation
- Ease of paralleling due to positive thermal coefficient
- Simple drive requirements suitable for standard logic levels
Single FETs, MOSFETs Applications
- High-frequency power conversion circuits
- Motor control applications requiring fast switching
- DC-DC converter designs utilizing surface mount assembly
- General purpose high-voltage switching systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm lead-free status and packaging format. The datasheet lists IRF820SPbF as the lead-free variant available in tube packaging. Confirm RoHS compliance requirements against the specific part marking. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and revision level.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage blocking capabilities in a compact surface-mount footprint. Evaluate thermal management strategies carefully, as the on-resistance increases significantly at elevated temperatures. Consider the gate charge specifications when designing driver circuits to optimize switching losses. Verify that the peak pulsed current requirements do not exceed the specified avalanche limits.
Single FETs, MOSFETs Part Context
This device belongs to the IRF820 family of power MOSFETs manufactured by Vishay Siliconix. The family includes variants such as the IRF820L and SiHF820S, which share similar electrical characteristics but differ in package type or material composition. These components represent third-generation technology designed to balance low on-resistance with fast switching speeds for efficient power management.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the IRF820SPbF for lead-free tube packaging requirements. The SiHF820S serves as a halogen-free alternative within the same package configuration. Cross-referencing pinouts and thermal resistance values is essential when substituting with other manufacturers' 500 V N-channel MOSFETs.
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