IRF8513TRPBF

FET, MOSFET Arrays Overview

The IRF8513TRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It integrates two optimized transistors: Q1 (Control FET) with Rds(on) max of 15.5mΩ at Vgs=10V and Id=8.0A, and Q2 (Synchronous FET) with Rds(on) max of 12.7mΩ at Vgs=10V and Id=11A. Both channels feature a 30V drain-source breakdown voltage and a ±20V gate-source rating. The device supports continuous currents up to 8.0A (Q1) and 11A (Q2) at 25°C, with pulsed currents reaching 64A and 88A respectively. Total gate charge is typically 5.7nC for Q1 and 7.6nC for Q2.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrating control and synchronous switching functions within a single industry-standard SO-8 package.
• Optimized low on-resistance and gate charge parameters specifically designed to minimize conduction and switching losses in synchronous buck applications.
• Fully characterized avalanche performance ensuring reliability under unclamped inductive switching conditions.

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in notebook computers
• Server power supply modules
• Graphics card voltage regulation circuits
• Game console power management systems
• Set-top box DC-DC conversion

FET, MOSFET Arrays Procurement Notes

Verify the component status as discontinued or obsolete through official manufacturer channels before finalizing design-in decisions. Confirm that the specific tape-and-reel packaging variant matches the required manufacturing automation standards. Ensure compliance with current environmental directives such as RoHS and halogen-free requirements by checking the latest datasheet revision. Validate thermal management capabilities against the junction-to-ambient resistance specifications provided in the official documentation.

FET, MOSFET Arrays Selection Notes

Select this component for high-efficiency synchronous buck converters requiring compact dual-MOSFET integration. The distinct optimization of Q1 and Q2 allows tailored performance for control and synchronous roles. Evaluate thermal constraints carefully due to the SO-8 package limitations. Consider the low gate charge for driving efficiency in high-frequency operation. Ensure the 30V voltage rating provides sufficient headroom for the target application's input voltage range.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family utilizing advanced silicon technology. It represents a dual-transistor solution aimed at reducing board space compared to discrete implementations. The SO-8 package offers a balance between thermal dissipation and footprint size for consumer electronics. It is designed to replace separate N-channel MOSFETs in point-of-load architectures.

FET, MOSFET Arrays Replacement Considerations

IRF8513PbF

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in the IRF8513?

Q1 is optimized as the Control FET with a maximum continuous drain current of 8.0A and Rds(on) of 15.5mΩ. Q2 is optimized as the Synchronous FET with a higher current rating of 11A and lower Rds(on) of 12.7mΩ.

Is the IRF8513 suitable for avalanche applications?

Yes, the device is fully characterized for avalanche voltage and current, with guaranteed single-pulse avalanche energy ratings of 49mJ for Q1 and 70mJ for Q2.

What is the maximum gate-source voltage rating?

The maximum gate-to-source voltage rating is ±20V for both channels.