IRF8910GPBF

FET, MOSFET Arrays Overview

The IRF8910GPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20V drain-source voltage rating and a maximum continuous drain current of 10A at 25°C, dropping to 8.3A at 70°C. The device exhibits a maximum on-resistance of 13.4mΩ at VGS=10V and 18.3mΩ at VGS=4.5V. Total gate charge is typically 7.4nC with a gate-to-drain charge of 2.5nC. Power dissipation is rated at 2W at 25°C, with a thermal resistance junction-to-ambient of 62.5°C/W and a maximum junction temperature of 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a compact SO-8 footprint for space-constrained designs
• Ultra-low gate impedance to facilitate high-speed switching applications
• Low on-resistance characteristics optimized for operation at 4.5V gate drive voltages
• Fully characterized avalanche voltage and current capabilities

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters for desktop computers
• Power stages for server motherboards
• Graphics card voltage regulation modules
• Game console power distribution systems
• Set-top box DC/DC conversion circuits

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the ordering suffix matches the lead-free and halogen-free requirements specified in the product documentation. Ensure the package type corresponds to the SO-8 outline dimensions provided in the mechanical data section before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing low-voltage power stages requiring dual channel integration in surface-mount layouts. The specific on-resistance values at 4.5V and 10V gate drives determine conduction losses under varying control logic levels. Evaluate the total gate charge against the driver capability to ensure adequate switching speeds without excessive drive current demands.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced silicon processing to achieve low on-state resistance combined with high transconductance. The dual configuration allows for efficient half-bridge or synchronous rectifier implementations within a standard small-outline package format.

FET, MOSFET Arrays Replacement Considerations

IRF8910GTRPBF

FET, MOSFET Arrays FAQ

What is the maximum gate-to-source voltage rating?

The absolute maximum gate-to-source voltage rating is ±20V.

How does the continuous drain current change with temperature?

The continuous drain current decreases from 10A at an ambient temperature of 25°C to 8.3A at 70°C due to linear derating factors.

What are the typical capacitance values for this device?

The typical input capacitance is 960pF, output capacitance is 300pF, and reverse transfer capacitance is 160pF at 1.0MHz.