IRF8910PBF

FET, MOSFET Arrays Overview

The IRF8910PBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20V drain-source voltage rating and a maximum continuous drain current of 10A at 25°C. The device exhibits a maximum on-resistance of 13.4mΩ at VGS=10V and 18.3mΩ at VGS=4.5V. Total gate charge is typically 7.4nC at 4.5V, with a gate threshold voltage range of 1.65V to 2.55V. Thermal resistance junction-to-ambient is 62.5°C/W, supporting operation up to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a compact surface-mount package for space-constrained designs
• Ultra-low gate impedance enabling fast switching speeds and reduced drive requirements
• Very low on-resistance at 4.5V gate drive for improved efficiency in logic-level applications
• Fully characterized avalanche voltage and current ratings for robustness against inductive loads

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in desktop computers
• Power stages for server motherboards
• Graphics card voltage regulation modules
• Game console power management circuits
• Set-top box DC/DC conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the marking code against Infineon's official SO-8 part marking information. Confirm the lead-free status and ensure the datasheet version matches the manufacturing date code. Cross-reference the specific ordering suffix to confirm it corresponds to the standard tape and reel or tube packaging as required by your assembly process.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in an SO-8 footprint. It is suitable for low-voltage, high-current applications where logic-level gate drive compatibility is essential. Ensure the thermal design accounts for the 62.5°C/W junction-to-ambient resistance. Verify that the 20V breakdown voltage meets the system's peak transient requirements.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents a transition from International Rectifier products acquired by Infineon. The dual configuration allows for half-bridge or synchronous rectifier implementations in a single package, reducing board space compared to discrete single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible replacements within the same HEXFET series. Verify that any substitute maintains the 20V VDS rating and similar RDS(on) characteristics. Ensure the replacement package matches the SO-8 outline dimensions for mechanical fit.