IRF8910TRPBF

FET, MOSFET Arrays Overview

The IRF8910TRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20V drain-source voltage rating and a maximum continuous drain current of 10A at 25°C. The device exhibits a maximum on-resistance of 13.4mΩ at VGS=10V and 18.3mΩ at VGS=4.5V. Total gate charge is typically 7.4nC at 4.5V, with a gate threshold voltage range of 1.65V to 2.55V. Thermal resistance junction-to-ambient is 62.5°C/W, supporting operation up to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a single surface-mount package for space-constrained designs
• Ultra-low gate impedance to facilitate efficient switching control
• Low on-resistance characteristics optimized for low-voltage drive conditions
• Fully characterized avalanche voltage and current capabilities

FET, MOSFET Arrays Applications

• Point-of-load converters in desktop computers
• Power stages for server systems
• Graphics card power management circuits
• Game console internal power regulation
• Set-top box voltage conversion modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required tape and reel packaging format. Confirm that the component version aligns with lead-free and halogen-free compliance standards. Ensure the manufacturer designation corresponds to Infineon Technologies or authorized successor entities. Validate that the datasheet revision supports the intended thermal and electrical design parameters.

FET, MOSFET Arrays Selection Notes

Evaluate the total gate charge requirements against the available driver capability to ensure adequate switching speeds. Assess the thermal resistance limits relative to the expected ambient temperature and PCB copper area. Consider the body diode reverse recovery characteristics if used in synchronous rectification topologies. Verify that the gate-source voltage ratings accommodate the controller output levels without exceeding maximum limits.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs, designed for high-efficiency switching applications. The dual N-channel architecture allows for compact implementation in bridge or half-bridge configurations. The SO-8 package provides a balance between thermal performance and board space efficiency for consumer electronics.

FET, MOSFET Arrays Replacement Considerations

IRF8910PBF (Lead-Free variant)

FET, MOSFET Arrays FAQ

What is the maximum gate-to-source voltage rating?

The maximum gate-to-source voltage rating is ±20V.

How does the on-resistance vary with gate voltage?

The maximum on-resistance is 13.4mΩ at VGS=10V and increases to 18.3mΩ at VGS=4.5V.

Is this component suitable for automotive applications?

No, the documentation states the product is designed and qualified for the Consumer market.