IRF8915

FET, MOSFET Arrays Overview

The IRF8915 is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-to-source voltage of 20 V and a continuous drain current of 8.9 A at 25°C. The device has a maximum on-resistance of 18.3 mΩ at VGS = 10V and 27 mΩ at VGS = 4.5V. Total gate charge is typically 4.9 nC at VGS = 4.5V, with a gate-drain charge of 1.7 nC. Maximum power dissipation is 2 W at 25°C, and the junction temperature range extends up to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a single compact SO-8 package
• Ultra-low gate impedance for efficient switching control
• Very low RDS(on) to minimize conduction losses
• Fully characterized avalanche voltage and current ratings

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters
• Desktop computer power supplies
• Server power distribution
• Graphics card voltage regulation
• Game console power systems
• Set-top box power management

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if mandated by your design standards. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a dual N-channel MOSFET solution in a space-constrained SO-8 footprint. The low gate charge supports high-frequency switching operations typical in POL converters. Evaluate thermal performance based on the specified junction-to-ambient resistance and ensure the operating environment stays within the -55°C to +150°C range.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes Trench technology to achieve low on-resistance and fast switching speeds. The dual configuration allows for synchronous rectification or half-bridge topologies within a single package, optimizing board space and reducing interconnect parasitics in power conversion circuits.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the 20 V rating, SO-8 package dimensions, and dual N-channel configuration. Verify that thermal characteristics and gate charge parameters are compatible with the existing driver circuitry.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the IRF8915?

The maximum continuous drain current is 8.9 A at an ambient temperature of 25°C.

Does the IRF8915 support avalanche operation?

Yes, the device is fully characterized for avalanche voltage and current, allowing it to handle unclamped inductive switching events within specified limits.

What is the typical total gate charge at VGS = 4.5V?

The typical total gate charge (Qg) is 4.9 nC when measured at a gate-to-source voltage of 4.5V.