IRF8915TR

FET, MOSFET Arrays Overview

The IRF8915TR is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-to-source voltage of 20 V and a continuous drain current of 8.9 A at 25°C. The maximum on-resistance is 18.3 mΩ at VGS = 10V and 27 mΩ at VGS = 4.5V. Total gate charge is typically 4.9 nC at VGS = 4.5V, with a gate-drain charge of 1.7 nC. Power dissipation is 2 W at 25°C, with a junction temperature range up to 150°C.

FET, MOSFET Arrays Feature Summary

• Ultra-low gate impedance for efficient switching
• Very low RDS(on) for reduced conduction losses
• Fully characterized avalanche voltage and current ratings

FET, MOSFET Arrays Applications

• Dual SO-8 MOSFET for POL converters
• Desktop computer power supplies
• Server power solutions
• Graphics card power circuits
• Game console power management

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging and lead-free status. Ensure the component meets consumer market qualification standards as specified in the datasheet. Confirm that the SO-8 package dimensions align with your PCB footprint requirements before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual MOSFET integration within low-voltage environments. Evaluate thermal performance based on the 62.5 K/W junction-to-ambient resistance. Consider the 20 V rating and 8.9 A current capacity relative to system load requirements. Verify compatibility with standard gate drive voltages for optimal RDS(on) performance.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family, representing Infineon's power MOSFET technology. It utilizes an SO-8 surface-mount package designed for space-constrained designs. The dual configuration integrates two independent N-channel MOSFETs into a single component, facilitating synchronous rectification or half-bridge topologies in portable and desktop electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 20 V rating, SO-8 package, and dual N-channel configuration. Verify equivalent electrical parameters including RDS(on), gate charge, and thermal resistance to maintain circuit performance.