IRF9358TRPBF

FET, MOSFET Arrays Overview

The IRF9358TRPBF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a drain-to-source voltage of -30 V and a continuous drain current of -9.2 A at 25°C. The maximum on-resistance is 16.3 mΩ at VGS = -10V and 23.8 mΩ at VGS = -4.5V. Total gate charge is typically 19 nC. Power dissipation reaches 2.0 W at 25°C, with a junction temperature range of -55 to +150 °C.

FET, MOSFET Arrays Feature Summary

• Industry-standard SO-8 package ensures multi-vendor compatibility
• RoHS compliant construction containing no lead, bromide, or halogen
• Consumer qualification with MSL1 rating for increased reliability

FET, MOSFET Arrays Applications

• Charge and discharge switch for notebook PC battery applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TRPBF confirms tape and reel packaging rather than tube or bulk formats. Confirm the component status remains active as Infineon transitioned from International Rectifier. Ensure the requested quantity aligns with standard reel sizes to avoid partial reel handling issues during assembly.

FET, MOSFET Arrays Selection Notes

Select this component for low-side switching where compact dual-channel integration is required. The SO-8 footprint facilitates easy replacement in existing designs. Evaluate thermal derating requirements carefully, as power dissipation drops significantly above 70°C ambient temperature.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents a legacy product line originally developed by International Rectifier before acquisition. The device provides a cost-effective solution for general-purpose power switching in consumer electronics.

FET, MOSFET Arrays Replacement Considerations

IRF9358PbF (Tube/Bulk variant)