FET, MOSFET Arrays IRF9362PBF product image

IRF9362PBF

  • Description:MOSFET 2P-CH 30V 8A 8SO
  • Series:HEXFET®

SKU:a06e55575382 Category: Brand:

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IRF9362PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 8A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9362PBF

  • Description:MOSFET 2P-CH 30V 8A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1300pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF9362PBF

IRF9362PBF

FET, MOSFET Arrays Overview

The IRF9362PbF is a P-Channel HEXFET Power MOSFET housed in an industry-standard SO-8 package. It features a -30 V drain-to-source voltage rating and supports continuous drain currents of -8.0 A at 25°C and -6.4 A at 70°C. The device exhibits a maximum on-resistance of 21.0 mΩ at VGS = -10V and 32.0 mΩ at VGS = -4.5V. Total gate charge is typically 13 nC, with a junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Industry-standard SO-8 package ensures multi-vendor compatibility
  • RoHS compliant construction containing no lead, bromide, or halogen
  • Low gate charge facilitates fast switching performance

FET, MOSFET Arrays Applications

  • Power management circuits for portable devices
  • Low-side switching applications
  • DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix against official Infineon documentation before procurement. Confirm that the component matches the specific RoHS compliance requirements and packaging format (Tube/Bulk vs. Tape and Reel) required by your manufacturing process. Ensure all technical specifications align with your design constraints.

FET, MOSFET Arrays Selection Notes

Select this component when a P-Channel MOSFET with low on-resistance and standard surface-mount footprint is required. Consider the thermal derating characteristics for high ambient temperatures. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching speeds and efficiency.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs, known for robust performance in power switching applications. The SO-8 package provides a compact solution suitable for space-constrained designs while maintaining adequate thermal dissipation capabilities for moderate current levels.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout configuration, voltage ratings, and thermal characteristics to guarantee functional equivalence without redesigning the PCB layout.

IRF9362PBFIRF9362PBF

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