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IRF9362PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 8A 8SO. Review the specifications below when checking this part for your BOM.
The IRF9362PbF is a P-Channel HEXFET Power MOSFET housed in an industry-standard SO-8 package. It features a -30 V drain-to-source voltage rating and supports continuous drain currents of -8.0 A at 25°C and -6.4 A at 70°C. The device exhibits a maximum on-resistance of 21.0 mΩ at VGS = -10V and 32.0 mΩ at VGS = -4.5V. Total gate charge is typically 13 nC, with a junction temperature range from -55°C to +150°C.
Verify the exact ordering suffix against official Infineon documentation before procurement. Confirm that the component matches the specific RoHS compliance requirements and packaging format (Tube/Bulk vs. Tape and Reel) required by your manufacturing process. Ensure all technical specifications align with your design constraints.
Select this component when a P-Channel MOSFET with low on-resistance and standard surface-mount footprint is required. Consider the thermal derating characteristics for high ambient temperatures. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching speeds and efficiency.
This part belongs to the HEXFET family of power MOSFETs, known for robust performance in power switching applications. The SO-8 package provides a compact solution suitable for space-constrained designs while maintaining adequate thermal dissipation capabilities for moderate current levels.
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout configuration, voltage ratings, and thermal characteristics to guarantee functional equivalence without redesigning the PCB layout.
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