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IRF9389PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 6.8A/4.6A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF9389PBF
- Description：MOSFET N/P-CH 30V 6.8A/4.6A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.8A, 4.6A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：398pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF9389PBF
FET, MOSFET Arrays Overview
The IRF9389PBF is a HEXFET Power MOSFET featuring an N-channel and a P-channel device integrated within a single SO-8 package. It provides a drain-to-source voltage rating of ±30 V. The continuous drain current is specified at 6.8 A for the N-channel and -4.6 A for the P-channel at 25°C ambient temperature. Maximum on-resistance values are 27 mΩ for the N-channel and 64 mΩ for the P-channel, measured at a gate-to-source voltage of 10 V. Total gate charge typically ranges from 6.8 nC to 8.1 nC.
FET, MOSFET Arrays Feature Summary
- Integrates high-side P-channel and low-side N-channel MOSFETs in one package to increase power density
- Features industry-standard pinout to ensure multi-vendor compatibility with existing surface mount techniques
FET, MOSFET Arrays Applications
- Synchronous rectification circuits
- DC/DC converter designs
- General-purpose switching applications
FET, MOSFET Arrays Procurement Notes
Verify the exact ordering suffix against official Infineon documentation before procurement. Confirm that the component meets RoHS compliance standards and Consumer qualification levels as specified in the datasheet. Ensure the selected package variant matches the required manufacturing process for your specific assembly line.
FET, MOSFET Arrays Selection Notes
Evaluate the thermal resistance characteristics and maximum junction temperature limits when designing the heat dissipation strategy. Consider the gate threshold voltage range and total gate charge requirements to optimize driver circuit performance. Verify that the operating conditions remain within the absolute maximum ratings defined in the specification sheet.
FET, MOSFET Arrays Part Context
This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced planar strip technology to achieve low on-resistance and fast switching speeds. The integration of complementary channel types simplifies board layout and reduces the overall component count in power management systems.
FET, MOSFET Arrays Replacement Considerations
Cross-reference compatible dual MOSFET packages with matching voltage and current ratings. Verify pinout compatibility and thermal performance specifications before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
