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IRF9389TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N/P-CH 30V 6.8A 8SOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF9389TR
- Description：MOSFET N/P-CH 30V 6.8A 8SOP
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.8A (Ta), 4.6A (Ta)
- Rds On (Max) @ Id, Vgs：27mOhm @ 6.8A, 10V, 64mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V, 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：398pF @ 15V, 383pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF9389TR
FET, MOSFET Arrays Overview
The UMW IRF9389TR is a dual N+P-channel MOSFET in an SOP-8 package. The N-channel provides a 30V breakdown voltage, 6.8A continuous drain current at 25°C, and on-resistance under 27mΩ at VGS=10V. The P-channel offers -30V breakdown, -4.6A current, and on-resistance below 64mΩ at VGS=-10V. Total gate charge is 14nC for the N-channel and 16nC for the P-channel. Thermal resistance junction-to-ambient is 62.5°C/W, with an operating temperature range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Integrated complementary N+P channel configuration in a single surface-mount package
- Low on-resistance optimized for efficient power switching applications
- High-speed switching capability with low total gate charge values
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power management integrated circuits
- General-purpose switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering code UMW IRF9389TR against the manufacturer's official documentation to confirm availability status. Ensure the SOP-8 tape and reel packaging quantity matches project requirements. Cross-reference thermal derating curves for high-temperature operational environments.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual-switch solution is required for low-voltage power stages. Verify that the 30V rating exceeds the maximum circuit voltage. Confirm that the SOP-8 footprint aligns with the PCB layout constraints and thermal dissipation capabilities of the target application board.
FET, MOSFET Arrays Part Context
This part belongs to the UMW IRF9389 series of dual MOSFETs. It integrates both N-channel and P-channel devices into one SOP-8 housing. This design reduces component count and board space compared to using discrete single-channel transistors.
FET, MOSFET Arrays Replacement Considerations
Check datasheets for other dual N+P MOSFETs in SOP-8 packages. Ensure replacement parts match the 30V rating and similar on-resistance specifications. Verify pinout compatibility and thermal performance characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
