FET, MOSFET Arrays IRF9395MTR1PBF product image

IRF9395MTR1PBF

  • Description:MOSFET 2P-CH 30V 14A DIRECTFETMC
  • Series:HEXFET®

SKU:e5f92118053e Category: Brand:

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IRF9395MTR1PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 14A DIRECTFETMC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9395MTR1PBF

  • Description:MOSFET 2P-CH 30V 14A DIRECTFETMC
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:14A
  • Rds On (Max) @ Id, Vgs:7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:3241pF @ 15V
  • Power - Max:2.1W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:DirectFET™ Isometric MC
  • Supplier Device Package:DIRECTFET™ MC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF9395MTR1PBF

IRF9395MTR1PBF

FET, MOSFET Arrays Overview

The IRF9395MTR1PBF is a dual P-channel power MOSFET from Infineon Technologies, part of the HEXFET series. It utilizes DirectFET MC packaging for surface mount installation. The device features a drain-source voltage rating of 30V and a continuous drain current of 14A at 25°C. Key electrical parameters include a maximum on-resistance of 7 milliohms at 14A and 10V gate drive, a threshold voltage maximum of 2.4V at 50µA, and a maximum gate charge of 64nC at 10V. Input capacitance is rated at 3241pF at 15V. The component supports logic level gate driving and operates within a junction temperature range of -40°C to 150°C with a maximum power dissipation of 2.1W.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration integrated into a single package
  • DirectFET MC surface mount technology for thermal efficiency
  • Logic level gate drive capability for direct microcontroller interfacing

FET, MOSFET Arrays Applications

  • Power management circuits requiring dual P-channel switching
  • Low voltage DC-DC converter topologies
  • Battery protection and load switch applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors as this specific part number is listed as obsolete. Confirm that the replacement variant maintains identical pinout and electrical specifications to ensure compatibility with existing PCB layouts. Check for updated datasheets reflecting any final manufacturing changes before integration into new designs.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage applications. The DirectFET MC package offers a balance between thermal performance and footprint size. Ensure the design accounts for the 30V voltage limit and 14A current capacity under expected operating temperatures.

FET, MOSFET Arrays Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs. It is designed for general-purpose power switching in consumer and industrial electronics. The DirectFET MC package integrates the die directly onto the leadframe to minimize thermal resistance compared to traditional plastic packages.

FET, MOSFET Arrays Replacement Considerations

The product status is officially listed as obsolete. Engineers should consult Infineon documentation for qualified alternative part numbers or next-generation replacements that offer equivalent or improved electrical characteristics and package compatibility.

IRF9395MTR1PBFIRF9395MTR1PBF

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