IRF9910PBF

FET, MOSFET Arrays Overview

The IRF9910PbF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It integrates two independent channels: Q1 (Control FET) rated at 10A continuous drain current with a maximum RDS(on) of 13.4mΩ at VGS=10V, and Q2 (Synchronous FET) rated at 12A with a maximum RDS(on) of 9.3mΩ at VGS=10V. Both channels support a 20V drain-to-source voltage and a ±20V gate-to-source voltage. The device features low gate charge (Qg typ 7.4nC for Q1, 15nC for Q2 at VGS=4.5V), fully characterized avalanche capabilities, and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration optimized for synchronous rectification applications
• Very low on-resistance at 4.5V gate drive voltage
• Low total gate charge for efficient switching performance
• Fully characterized avalanche voltage and current ratings

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in desktop computers
• Server power supply modules
• Graphics card voltage regulation circuits
• Game console power management systems
• Set-top box DC-DC conversion stages

FET, MOSFET Arrays Procurement Notes

Verify the component datasheet directly from Infineon or authorized distributors to confirm current manufacturing status and electrical specifications. Ensure the SO-8 package dimensions match your PCB footprint requirements. Check for RoHS compliance documentation if required by your assembly standards. Confirm that the lead-free designation aligns with your soldering process constraints.

FET, MOSFET Arrays Selection Notes

Select this component when designing low-voltage, high-current synchronous buck converters requiring compact surface-mount packaging. The dual-channel design simplifies layout for control and synchronous rectifier roles. Evaluate thermal resistance parameters against your expected ambient temperatures and power dissipation levels. Ensure gate drive voltages remain within the specified thresholds for optimal RDS(on) performance.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs, known for advanced silicon processing techniques that achieve low on-resistance per unit area. The SO-8 package provides a compact solution for dual-channel applications, integrating both control and synchronous rectification functions into a single footprint to reduce board space and component count.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing absolute maximum ratings, thermal characteristics, and pinout configurations before substitution.