IRF9910TR

FET, MOSFET Arrays Overview

The IRF9910TR is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 20 V and a continuous drain current capacity of up to 12 A at 25°C. The device exhibits a maximum on-resistance of 13.4 mΩ at 10 V gate drive and 18.3 mΩ at 4.5 V. With a typical total gate charge of 15 nC at 4.5 V and a thermal resistance from junction to ambient of 62.5 K/W, it supports a maximum junction temperature of 150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single compact SO-8 package for space-constrained designs
• HEXFET technology providing low on-resistance for efficient power switching
• Enhanced gate threshold voltage range supporting standard logic-level control

FET, MOSFET Arrays Applications

• Low-voltage DC-DC converter circuits
• Power management modules requiring dual channel isolation
• Battery protection and load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TR against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and lead-free certification details directly with the manufacturer or authorized distributors before procurement. Ensure the component matches the required moisture sensitivity level for your assembly process.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in an SO-8 footprint. Evaluate the 20 V breakdown voltage and 12 A current capability against circuit demands. Consider the 62.5 K/W thermal resistance for heat dissipation requirements in enclosed environments compared to larger packages.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, utilizing trench technology for power switching. The IRF9910 variant specifically integrates two independent N-channel MOSFETs, offering a compact solution for applications needing dual switches without occupying separate board areas.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Check pinout compatibility and electrical parameter equivalence for any alternative dual N-channel MOSFETs in SO-8 packages.