IRF9910TRPBF

FET, MOSFET Arrays Overview

The IRF9910TRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It integrates two distinct transistors: Q1 (Control FET) rated for 10A continuous drain current with a maximum RDS(on) of 18.3mΩ at VGS=10V, and Q2 (Synchronous FET) rated for 12A with a maximum RDS(on) of 11.3mΩ at VGS=10V. Both channels feature a 20V drain-to-source voltage rating and a ±20V gate-to-source voltage limit. The device supports a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration optimized for synchronous rectification applications
• Very low on-resistance characteristics at 4.5V gate drive voltages
• Fully characterized avalanche voltage and current capabilities
• Low gate charge for efficient switching performance

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in desktop computers
• Server power supply units
• Graphics card voltage regulation modules
• Game console power management systems
• Set-top box power circuits

FET, MOSFET Arrays Procurement Notes

Verify the component status before procurement as it may be subject to discontinuation or lifecycle changes. Confirm that the SO-8 package and pinout match the design requirements. Ensure the supplier provides original manufacturer documentation to validate authenticity. Check for RoHS compliance if required by specific regional regulations.

FET, MOSFET Arrays Selection Notes

Select this component when designing synchronous buck converters requiring integrated control and synchronous FETs in a compact footprint. The dual configuration reduces board space compared to discrete solutions. Consider the thermal resistance and derating curves for high ambient temperature environments. Verify gate drive compatibility with the specified threshold voltage ranges.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, known for high-performance power switching. The TRPBF suffix indicates tape and reel packaging for automated assembly. As a dual MOSFET, it simplifies the design of half-bridge or synchronous rectifier stages by integrating complementary switching elements into a single package.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.