IRF9952TRPBF

$1.01

Description：MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Series：HEXFET®

SKU:6962ad9e2bac Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF9952TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 3.5A/2.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9952TRPBF

Description：MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.5A, 2.3A
Rds On (Max) @ Id, Vgs：100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF9952TRPBF

IRF9952TRPBF

FET, MOSFET Arrays Overview

The IRF9952TRPBF is a dual N-channel and P-channel HEXFET power MOSFET array housed in an 8-SO surface-mount package. It features a drain-source voltage of 30V, with continuous drain currents of 3.5A for the N-channel and 2.3A for the P-channel at 25°C. The device exhibits a maximum on-resistance of 100mΩ at 10V gate drive. Operating characteristics include a junction temperature range of -55°C to 150°C, a maximum power dissipation of 2W, and a logic-level gate threshold voltage.

FET, MOSFET Arrays Feature Summary

Dual configuration integrating both N-channel and P-channel MOSFETs within a single compact SO-8 package to minimize board space.
Utilizes advanced HEXFET process technology to achieve ultra-low on-resistance per silicon area for improved efficiency.
Designed for fast switching speeds and includes improved repetitive avalanche rating capabilities for robust performance.

FET, MOSFET Arrays Applications

Data processing systems
Power management circuits requiring complementary channel pairs
General-purpose low-voltage power switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status as per current Infineon documentation. Check component availability status, as this part may be subject to discontinuation or supply constraints. Ensure the ordering quantity matches the manufacturer's standard reel specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a matched N/P pair in a small footprint. The 30V rating suits low-voltage DC-DC converters and load switches. Evaluate thermal requirements carefully due to the 2W power dissipation limit in the SO-8 package. Ensure gate drive voltages align with the logic-level threshold specifications for optimal conduction.

FET, MOSFET Arrays Part Context

This device belongs to the Infineon HEXFET family, known for high-efficiency power switching. It represents a transition from International Rectifier heritage products now managed by Infineon Technologies. The dual-channel architecture allows for simplified circuit design in bridge configurations or push-pull drivers without needing separate discrete components.