IRF9953

FET, MOSFET Arrays Overview

The IRF9953 is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It integrates two independent P-channel MOSFETs within an 8-SOIC surface-mount package. The device supports a drain-source voltage of -30V and delivers a continuous drain current of -2.3A at 25°C. Key electrical characteristics include a maximum on-resistance of 250 milliohms at 10V gate drive, a threshold voltage of 1V, and a total gate charge of 12nC. The component operates within a junction temperature range of -55°C to 150°C and features a maximum power dissipation of 2W.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent P-channel MOSFETs in a single compact package
• HEXFET technology providing low on-resistance and fast switching capabilities
• Logic-level compatible with a low threshold voltage for efficient microcontroller driving
• Surface-mount construction optimized for automated assembly and space-constrained designs

FET, MOSFET Arrays Applications

• Battery protection circuits requiring dual-channel isolation or control
• Load switch applications in portable electronic devices
• Power management modules for mobile communication equipment
• DC-DC converter input/output stages utilizing complementary or half-bridge topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix (PBF vs TRPBF) to confirm packaging type, as tube and tape-and-reel variants exist. Confirm availability status, as some distributors list this part as discontinued or subject to supply limitations. Ensure the selected variant matches the required moisture sensitivity level and RoHS compliance standards for the target manufacturing process.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a small footprint. Compare the 250 milliohm on-resistance against system thermal constraints to ensure adequate heat dissipation within the 2W limit. Verify that the -30V rating exceeds the maximum circuit voltage. Consider the 12nC gate charge for driver capability requirements in high-frequency switching applications.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's HEXFET family of power MOSFETs, known for advanced processing techniques that achieve low on-resistance per silicon area. The dual configuration allows for simplified board layout in applications requiring paired switches. The SO-8 package provides a balance between thermal performance and size efficiency for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

The IRF9358 is a documented alternative offering lower on-resistance but requires verification of pinout compatibility and specific electrical parameter alignment with the original design requirements.