IRF9953PBF

FET, MOSFET Arrays Overview

The IRF9953PBF is a dual P-channel power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.3A at 25°C. The device exhibits a maximum on-resistance of 250 milliohms at 1A with a gate-source voltage of 10V. Packaged in an 8-SOIC surface-mount configuration, it operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel architecture integrating two independent transistors in a single package
• HEXFET technology optimized for low on-resistance and efficient switching performance
• Surface-mount construction suitable for automated assembly processes

FET, MOSFET Arrays Applications

• Data processing systems requiring compact power management solutions
• Low-voltage DC-DC converter circuits
• Load switching applications in portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the part number suffix matches the specific tape-and-reel or tube packaging variant required for your manufacturing line. Ensure compliance with RoHS directives and check for any obsolescence notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require dual P-channel functionality without occupying multiple PCB footprints. Evaluate thermal management requirements carefully, as the 2W power dissipation limit necessitates adequate heat sinking or copper area allocation. Compare on-resistance specifications against system efficiency targets to ensure optimal voltage drop characteristics under load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs, representing Infineon's legacy International Rectifier product line. The IRF9953 series specifically targets applications needing reliable dual-channel control in low-voltage environments. It serves as a discrete alternative to integrated power switches in cost-sensitive consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same HEXFET portfolio. Verify that substitute parts maintain identical 8-SOIC footprint dimensions and electrical parameters such as threshold voltage and breakdown limits.