FET, MOSFET Arrays IRF9953TRPBF product image

IRF9953TRPBF

  • Description:MOSFET 2P-CH 30V 2.3A 8SO
  • Series:HEXFET®

SKU:626b0e2b916e Category: Brand:

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IRF9953TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 2.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9953TRPBF

  • Description:MOSFET 2P-CH 30V 2.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.3A
  • Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF9953TRPBF

IRF9953TRPBF

FET, MOSFET Arrays Overview

The IRF9953TRPBF is a dual P-channel MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features an 8-SOIC surface-mount package with a drain-source voltage of -30 V and a continuous drain current of -2.3 A at 25°C. The device exhibits a maximum on-resistance of 165 mΩ at a gate-source voltage of -10 V. Key electrical characteristics include a gate charge of 12 nC and an input capacitance of 190 pF. It operates within a temperature range of -55°C to +150°C TJ and has a power dissipation rating of 2 W.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration integrating two independent transistors in a single compact package for space-constrained designs.
  • HEXFET technology providing optimized switching performance and low conduction losses for efficient power management.
  • Surface-mount 8-SOIC construction facilitating automated assembly and reliable thermal performance.

FET, MOSFET Arrays Applications

  • Low-side switching in DC-DC converter circuits
  • Load distribution in portable electronic devices
  • Power management modules requiring dual channel control

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TRPBF confirms tape-and-reel packaging when sourcing. Confirm RoHS compliance status as required by project specifications. Ensure the 8-SOIC footprint matches the PCB layout constraints. Check for any obsolescence notices or lifecycle changes directly from Infineon before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel switching with moderate current capabilities. The 30 V rating suits low-voltage systems. Evaluate thermal requirements carefully due to the 2 W dissipation limit in the SOIC package. Compare gate charge values against driver capabilities to ensure adequate switching speeds without excessive drive current demands.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, known for high reliability and performance. The IRF9953 variant specifically addresses needs for dual-channel integration in small form factors. It complements single-channel options by reducing board space and interconnect complexity in multi-rail or redundant power architectures.

FET, MOSFET Arrays Replacement Considerations

The IRF9953PBF is a tube-packaged alternative offering identical electrical specifications. Verify that the change in packaging format aligns with available pick-and-place equipment capabilities. No functional differences exist between the reel and tube versions regarding semiconductor performance.

IRF9953TRPBFIRF9953TRPBF

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