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IRF9956 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 3.5A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF9956
- Description：MOSFET 2N-CH 30V 3.5A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A
- Rds On (Max) @ Id, Vgs：100mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF9956
FET, MOSFET Arrays Overview
The IRF9956 is a dual N-channel power MOSFET from International Rectifier, utilizing Fifth Generation HEXFET technology. It features an ultra-low on-resistance of 0.10 ohms and a drain-source voltage rating of 30V. The device is designed for surface mount applications with very low gate charge and switching losses. It is fully avalanche rated and offers high efficiency due to advanced processing techniques that minimize resistance per silicon area.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration in a single package
- Ultra-low on-resistance for high efficiency
- Fully avalanche rated ruggedized design
- Very low gate charge and switching losses
FET, MOSFET Arrays Applications
- Low voltage DC-DC conversion
- Power management circuits
- Battery protection systems
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer origin as International Rectifier, now part of Infineon Technologies. Confirm the specific package type matches your PCB footprint requirements. Check for RoHS compliance status if required by your manufacturing standards. Ensure the component is suitable for new designs or obsolescence management.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring dual N-channel control in a compact form factor. The 30V rating suits low-voltage systems. Consider the 0.10 ohm on-resistance for thermal management needs. Verify gate drive compatibility with the low gate charge specifications for efficient switching performance.
FET, MOSFET Arrays Part Context
This component belongs to the HEXFET family, known for high reliability and low on-resistance. It represents Fifth Generation technology optimized for surface mount assembly. The dual channel design allows for synchronized switching or half-bridge configurations in space-constrained power electronics.
FET, MOSFET Arrays Replacement Considerations
Check for direct pin-compatible alternatives within the same HEXFET series. Verify electrical parameters such as Vds, Rds(on), and package dimensions match exactly. Consult manufacturer cross-reference guides for updated part numbers under Infineon branding.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
