IRF9956PBF

FET, MOSFET Arrays Overview

The IRF9956PBF is a dual N-channel power MOSFET from Infineon Technologies, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage of 30V and a continuous drain current of 3.5A at 25°C. The device exhibits a maximum on-resistance of 100mΩ at 10V gate drive and 200mΩ at 4.5V. Key electrical parameters include a typical gate charge of 6.9nC at 10V and a thermal resistance junction-to-ambient of 62.5K/W. It supports a maximum junction temperature of 150°C and complies with RoHS standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact SO-8 package for space-constrained designs.
• Optimized gate charge characteristics to support efficient switching performance.
• Low on-resistance values ensuring effective conduction across standard logic-level gate voltages.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring low-voltage synchronous rectification
• Power management modules for portable electronic devices
• Load switching applications in automotive infotainment systems

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the PBF suffix to confirm lead-free compliance and RoHS status. Confirm the SO-8 package variant matches your PCB footprint requirements. Check current product lifecycle status as availability may vary by region. Ensure storage conditions adhere to moisture sensitivity level guidelines before soldering.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a small form factor. Evaluate the 100mΩ on-resistance against your specific load current to manage thermal dissipation effectively. Consider the 30V breakdown voltage limit for system headroom. Compare gate charge specifications against your driver capabilities to ensure adequate switching speeds without excessive losses.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents a discrete solution for low-voltage power switching applications. The dual configuration allows for half-bridge or high-side/low-side driving schemes within a single package, reducing board space compared to using two separate single-channel devices.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the SO-8 package, 30V rating, and dual N-channel configuration. Verify that thermal and electrical parameters meet or exceed original specifications.