IRF9Z24NLPBF

$0.52

Description：MOSFET P-CH 55V 12A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:f83a5feed4c9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF9Z24NLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 12A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF9Z24NLPBF

Description：MOSFET P-CH 55V 12A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：175mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRF9Z24NLPBF

IRF9Z24NLPBF

Single FETs, MOSFETs Overview

The IRF9Z24NLPBF is a P-channel enhancement-mode power MOSFET from the Infineon HEXFET series. It features a maximum drain-source voltage of 55 V and a continuous drain current of 12 A at 25°C. The device exhibits a maximum on-resistance of 175 mΩ at a gate-source voltage of 10 V, with a typical gate charge of 12.7 nC. Designed for through-hole mounting in an I2PAK (TO-262) package, it supports a junction temperature up to 175°C and operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Utilizes advanced HEXFET technology for high-performance switching applications
Features low on-resistance to minimize conduction losses
Includes built-in body diode for inductive load handling

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control systems
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheets. Confirm package integrity and pin alignment prior to installation. Ensure storage conditions meet specified limits to prevent degradation. Cross-reference ordering information with current product availability notices.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust P-channel switching capabilities in through-hole layouts. Evaluate thermal management requirements based on the specified power dissipation limits. Consider the gate charge characteristics when designing drive circuits for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, known for high reliability and efficiency. It serves as a P-channel counterpart to N-channel variants like the IRFZ24N, offering complementary switching solutions for bridge configurations and high-side driving applications in power electronics.