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The IRFAE32 is an N-channel hermetic MOS HEXFET manufactured by International Rectifier. It is classified as a Radio Frequency Field-Effect Transistor designed for high-frequency applications. The device utilizes silicon metal-oxide semiconductor technology and features a hermetic package construction to ensure reliability in demanding environments.
Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the hermetic seal integrity meets project requirements. Ensure compatibility with RF circuit design parameters before integration into final assemblies.
Select this component for applications requiring robust RF performance and reliable hermetic sealing. Consider its N-channel configuration and silicon MOS technology for high-frequency signal processing needs where standard plastic packages are insufficient.
This part belongs to the International Rectifier family of RF FETs and MOSFETs. It represents a specialized segment of power semiconductor devices focused on radio frequency applications, distinct from general-purpose power switching transistors like the IRFAC32PBF or thyristors such as the ST303C04CDK3PBF found in the same manufacturer portfolio.