IRFH4253DTRPBF

FET, MOSFET Arrays Overview

The IRFH4253DTRPBF is a dual N-channel HEXFET power MOSFET from the FastIRFET family, housed in a Dual PQFN 5mm x 6mm package. It integrates a control FET (Q1) and a synchronous FET (Q2). Q1 features a maximum RDS(on) of 4.60 mΩ at VGS = 4.5V and a typical gate charge of 10 nC. Q2 offers a maximum RDS(on) of 1.45 mΩ at VGS = 4.5V with a typical gate charge of 31 nC. Both devices have a drain-source breakdown voltage of 25V. Continuous drain current is limited to 35A by source bonding technology.

FET, MOSFET Arrays Feature Summary

• Integrates control and synchronous MOSFETs within a single package to increase power density.
• Features low gate charge characteristics to reduce switching losses.
• Includes an intrinsic Schottky diode on the synchronous FET for lower forward voltage and reduced switching losses.

FET, MOSFET Arrays Applications

• Control and synchronous MOSFETs for synchronous buck converters

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific orderable part number matches the required tape and reel packaging format. Ensure compliance with RoHS and Halogen-Free environmental standards as specified in the datasheet documentation.

FET, MOSFET Arrays Selection Notes

Select this component when designing synchronous buck converters requiring integrated control and synchronous switching capabilities. The low gate charge values support high-frequency operation, while the specific RDS(on) ratings ensure efficient conduction. Verify thermal management requirements against the junction-to-ambient resistance specifications provided.

FET, MOSFET Arrays Part Context

This device belongs to the FastIRFET family of dual power MOSFETs designed for data processing systems. It utilizes silicon technology and is qualified to industrial standards with MSL1 moisture sensitivity. The package type is a standard Dual PQFN 5mm x 6mm form factor suitable for surface mount applications.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement lists for verified substitutes. Generic cross-references may not match the specific dual configuration or internal bonding limitations documented for this part number.

FET, MOSFET Arrays FAQ

What limits the continuous drain current for both Q1 and Q2?

The continuous drain current is limited to 35A for both transistors due to source bonding technology constraints.

Does the synchronous FET include an intrinsic body diode?

Yes, the synchronous FET (Q2) includes an intrinsic Schottky diode with a low forward voltage to minimize switching losses.