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IRFH5010TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 13A/100A 8PQFN. Review the specifications below when checking this part for your BOM.
The IRFH5010TRPBF is a single N-channel enhancement mode power MOSFET from the HEXFET G174 series, manufactured by Infineon Technologies. It utilizes a PQFN 5x6 mm surface-mount package with an industry-standard pinout. The device features a drain-to-source voltage (VDS) of 100 V and a maximum continuous drain current (ID) of 100 A at a case temperature of 25°C. The typical on-resistance (RDS(on)) is 7.5 mΩ, with a maximum rating of 9.0 mΩ at VGS = 10 V. Total gate charge (Qg) is typically 67 nC.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status and specific lot traceability requirements before integration. Ensure compliance with RoHS directives and industrial qualification standards relevant to the target deployment environment.
Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance. Verify that the gate drive circuitry can supply sufficient current to manage the total gate charge effectively. Assess the operating temperature range against the specified -55°C to +150°C limits to ensure reliable performance under expected load conditions.
This component belongs to the HEXFET G174 family of silicon power MOSFETs designed for high-efficiency switching applications. The PQFN 5x6 mm package provides a compact footprint suitable for dense board layouts while maintaining robust electrical characteristics for medium-voltage power conversion tasks.
IRFH5010TR2PBF
The maximum continuous drain current is 100 A when measured at a case temperature of 25°C.
Yes, the datasheet specifies avalanche characteristics including single pulse avalanche energy and avalanche current ratings.
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