IRFH7911TRPBF

Description：MOSFET 2N-CH 30V 13A/28A PQFN
Series：HEXFET®

SKU:3faa0f694736 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRFH7911TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 13A/28A PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRFH7911TRPBF

Description：MOSFET 2N-CH 30V 13A/28A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：13A, 28A
Rds On (Max) @ Id, Vgs：8.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 15V
Power - Max：2.4W, 3.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：18-PowerVQFN
Supplier Device Package：PQFN (5x6)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRFH7911TRPBF

IRFH7911TRPBF

FET, MOSFET Arrays Overview

The IRFH7911TRPbF is a dual N-channel HEXFET power MOSFET in a PQFN 5x6 mm package. It integrates a low-charge control FET (Q1) and a low RDS(on) synchronous FET (Q2). Q1 features VDS of 30V, ID of 13A at 25°C, RDS(on) max 8.6mΩ at 10V, and Qg typ 8.3nC. Q2 features VDS of 30V, ID of 28A at 25°C, RDS(on) max 3.0mΩ at 10V, and Qg typ 34nC. Both channels support VGS ±20V, TJ up to 150°C, and MSL2 qualification.

FET, MOSFET Arrays Feature Summary

Integrates control and synchronous FETs in one package for increased power density
Low gate charge on the control channel reduces switching losses
Low on-resistance on the synchronous channel minimizes conduction losses
Low profile design facilitates surface mount manufacturing

FET, MOSFET Arrays Applications

Synchronous rectification in DC-DC converters
Power management circuits requiring high efficiency
Applications utilizing existing surface mount techniques

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format. The TRPbF designation indicates tape and reel supply. Confirm RoHS compliance status and moisture sensitivity level requirements match the target assembly process specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require integrating both control and synchronous functions within a single footprint. The distinct electrical characteristics of Q1 and Q2 allow optimization for switching speed and conduction loss respectively. Ensure thermal management aligns with the specified junction-to-ambient resistance values for the intended operating environment.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET G174/G32 family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology within a lead-free PQFN 5mm x 6mm package. The product line focuses on providing high performance solutions for compact power electronics designs through advanced packaging and optimized cell structures.