IRFHM792TR2PBF

$1.93

Description：MOSFET 2N-CH 100V 2.3A 8PQFN
Series：-

SKU:470596e13eae Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRFHM792TR2PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 2.3A 8PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRFHM792TR2PBF

Description：MOSFET 2N-CH 100V 2.3A 8PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：2.3A
Rds On (Max) @ Id, Vgs：195mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id：4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：251pF @ 25V
Power - Max：2.3W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-PQFN-Dual (3.3x3.3)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRFHM792TR2PBF

IRFHM792TR2PBF

FET, MOSFET Arrays Overview

The IRFHM792TR2PBF is a dual N-channel HEXFET power MOSFET in a PQFN Dual 3.3x3.3 mm package. It features a maximum drain-to-source voltage of 100 V and a continuous drain current of 4.8 A at 25°C, limited to 3.4 A by wirebond capability. The device has a maximum on-resistance of 195 mΩ at VGS = 10V and a typical gate charge of 4.2 nC. Thermal resistance from junction to ambient is 55 °C/W, with an operating junction temperature range up to 150 °C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration integrated within a compact PQFN Dual 3.3x3.3 mm footprint
Low thermal resistance to the PCB for enhanced heat dissipation
Low profile construction supporting increased power density
Industry-standard pinout ensuring multi-vendor compatibility

FET, MOSFET Arrays Applications

DC-DC primary switching
48V battery monitoring systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required tape and reel quantity. Check for End-of-Life notices regarding mini-reel options before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel isolation in a small surface-mount form factor. Ensure the design accommodates the 195 mΩ maximum on-resistance for conduction loss calculations. Verify that the 100 V breakdown voltage exceeds the circuit's peak drain-to-source voltage requirements.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes the PQFN Dual 3.3x3.3 mm package to provide two independent N-channel devices in a single low-profile assembly suitable for high-density printed circuit board layouts.