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IRFHM8363TR2PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 11A 8PQFN. Review the specifications below when checking this part for your BOM.
The IRFHM8363TR2PBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a PQFN 3.3mm x 3.3mm lead-free package. The device supports a maximum drain-source voltage of 30V and a continuous drain current of 11A at 25°C ambient temperature. Maximum on-resistance is specified at 14.9mΩ at 10V gate drive and 20.4mΩ at 4.5V. Thermal performance includes a junction-to-ambient thermal resistance of 47K/W and a maximum junction temperature of 150°C. Gate charge characteristics feature a typical Qgd of 2nC and total Qg of 15nC.
Verify the specific ordering suffix TR2PBF against official Infineon documentation to confirm tape-and-reel packaging and lead-free status. Confirm component availability as the base model IRFHM8363 is listed as discontinued in public records. Ensure the datasheet version matches the production batch requirements for your design.
Select this component for low-voltage applications requiring dual channel integration in a small surface-mount package. Evaluate the 14.9mΩ on-resistance against system conduction loss targets. Consider the 30V rating for compatibility with standard logic-level gate drivers operating at 4.5V or 10V.
This part belongs to the Infineon HEXFET family, designed for general-purpose power switching. The PQFN 3.3x3.3 package offers thermal efficiency suitable for space-constrained designs. It serves as a discrete solution for driving loads in motor and power supply circuits where dual channels are beneficial.
Public records indicate the base model IRFHM8363 is discontinued. Verify if the IRF8313TRPBF serves as a functional substitute, noting its SOIC-8 package and similar 30V/9.7A specifications. Cross-reference electrical parameters carefully before implementation.
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