IRFHM8363TRPBF

FET, MOSFET Arrays Overview

The IRFHM8363TRPBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a PQFN 3.3mm x 3.3mm lead-free package. The device supports a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of 20V. At an ambient temperature of 25°C, the continuous drain current (ID) reaches 11A with a total power dissipation (PTOT) of 2.7W. The maximum on-resistance (RDS(on)) is 14.9mΩ at 10V gate drive and 20.4mΩ at 4.5V. Key switching parameters include a typical gate charge (Qgd) of 2nC and total gate charge (QG) of 15nC. The junction temperature (Tj) limit is 150°C, and the thermal resistance from junction to ambient (RthJA) is 47K/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact PQFN 3.3x3.3mm footprint for space-constrained designs.
• Low on-resistance characteristics optimized for efficient power conduction in low-voltage applications.
• Fast switching performance supported by low gate charge values suitable for high-frequency operation.

FET, MOSFET Arrays Applications

• Motor control systems
• Switching mode power supplies (SMPS)

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF indicates tape-and-reel packaging when sourcing. Confirm the component matches the official Infineon datasheet version 01_01 dated May 30, 2011. Ensure the supplier provides valid origin documentation to guarantee authenticity. Check for moisture sensitivity level 1 compliance if reflow soldering is required. Cross-reference the part number against the manufacturer's current product status to confirm availability.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel isolation in a minimal surface area. The 30V rating suits low-voltage DC-DC converters and battery-powered devices. Evaluate the 14.9mΩ RDS(on) against thermal constraints to ensure adequate heat dissipation without external heatsinks. Consider the 11A current capability relative to the PCB copper area for thermal management.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET family, known for high-speed switching capabilities. It is categorized under Power Products and specifically designed for efficient power conversion. The PQFN package represents a modern approach to reducing thermal resistance while maintaining electrical performance in small form factors.

FET, MOSFET Arrays Replacement Considerations

Consult the official Infineon cross-reference tools for verified substitutes. Ensure any replacement maintains the 30V VDS rating and compatible PQFN 3.3x3.3mm footprint. Verify that alternative parts offer equal or superior RDS(on) and switching speeds.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum junction temperature (Tj) is 150°C.

Does the IRFHM8363TRPBF support independent channel operation?

Yes, it contains two independent N-channel MOSFETs in a single package.

What is the thermal resistance from junction to ambient?

The maximum thermal resistance from junction to ambient (RthJA) is 47K/W.