IRFI4019H-117P

FET, MOSFET Arrays Overview

The IRFI4019H-117P is a digital audio MOSFET half-bridge consisting of two N-channel power switches in a TO-220 Full-Pak 5-pin package. It features a drain-to-source voltage (VDS) of 150 V, continuous drain current (ID) of 8.7 A at 25°C, and maximum on-resistance (RDS(on)) of 95 mΩ at 10 V. Typical gate charge (Qg) is 13 nC, switch charge (Qsw) is 4.1 nC, and internal gate resistance (RG(int)) is 2.5 Ω. The device supports a junction temperature range up to 150 °C with thermal resistance RθJA of 65 K/W.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge configuration reduces component count by half and facilitates better PCB layout.
• Key parameters optimized for Class-D audio amplifier applications to improve efficiency, THD, and EMI.
• Low Qg and Qsw values contribute to better total harmonic distortion and improved switching efficiency.
• Low body-diode reverse recovery charge (Qrr) minimizes electromagnetic interference.

FET, MOSFET Arrays Applications

• Class-D audio amplifier applications
• Half-bridge amplifier configurations delivering up to 200W per channel into an 8Ω load

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix '117' corresponds to the required lead-form option for the TO-220 Full-Pak package. Confirm that the component meets consumer market qualification standards as specified in the datasheet. Ensure design compliance with absolute maximum ratings, particularly regarding single pulse avalanche energy and thermal derating curves for your specific operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when designing Class-D audio amplifiers requiring integrated half-bridge functionality to minimize part count. Consider its 150 V rating and 8.7 A current capability for medium-power audio stages. Evaluate the low Qrr and optimized gate charge characteristics if strict EMI and THD performance are critical requirements for the target application.

FET, MOSFET Arrays Part Context

This device belongs to the StrongIRFET™ family of digital audio MOSFETs designed specifically for high-efficiency audio power amplification. It integrates two N-channel switches into a single robust package, simplifying the implementation of half-bridge topologies compared to using discrete components.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers: None identified in verified documentation.

FET, MOSFET Arrays FAQ

What is the typical internal gate resistance (RG(int))?

The typical internal gate resistance is 2.5 Ω.

Can this device deliver 200W per channel?

Yes, it can deliver up to 200W per channel into an 8Ω load in a half-bridge configuration.

What is the maximum junction temperature?

The maximum operating junction temperature is 150 °C.