IRFI4019H-117PXKMA1

FET, MOSFET Arrays Overview

The IRFI4019H-117P is a digital audio power MOSFET half-bridge featuring two N-channel switches in a TO-220 Full-Pak 5-pin package. It provides a maximum drain-to-source voltage of 150 V and continuous drain current of 8.7 A at 25°C. The device exhibits a typical on-resistance of 80 mΩ and total gate charge of 13 nC. Key parameters include a switching charge of 4.1 nC, internal gate resistance of 2.5 Ω, and reverse recovery charge of 140 nC. Thermal performance includes a junction-to-case resistance of 6.9 °C/W and junction-to-ambient resistance of 65 °C/W.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge configuration reduces component count by half
• Optimized for Class-D audio amplifier applications with low RDS(ON)
• Low Qg and Qsw values improve THD and efficiency
• Low Qrr characteristics reduce EMI and enhance THD

FET, MOSFET Arrays Applications

• Class-D audio amplifier designs
• Half-bridge amplifier configurations delivering up to 200W per channel into 8Ω loads
• Digital audio power switch implementations

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking variations. Confirm that the intended application aligns with the consumer market qualification standards specified in the datasheet. Ensure thermal management design accounts for the stated junction-to-ambient resistance values under expected operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when designing Class-D amplifiers requiring integrated half-bridge functionality to minimize PCB layout complexity. Consider the 150V breakdown voltage and 8.7A current rating for appropriate headroom. Evaluate the low gate charge and internal resistance benefits for high-efficiency audio signal processing requirements.

FET, MOSFET Arrays Part Context

This device belongs to the StrongIRFET family designed specifically for digital audio applications. It integrates two power MOSFETs optimized for low on-resistance and fast switching characteristics. The technology focuses on improving audio performance metrics such as Total Harmonic Distortion (THD) and Electromagnetic Interference (EMI) through precise parameter tuning.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.

FET, MOSFET Arrays FAQ

What is the maximum output power capability of this half-bridge?

The device can deliver up to 200W per channel into an 8Ω load when used in a half-bridge amplifier configuration.

How does the internal gate resistance affect performance?

The typical internal gate resistance of 2.5 Ω helps optimize switching speed and damping, contributing to improved THD and reduced EMI in audio applications.

Is this component suitable for industrial or automotive use?

No, the datasheet explicitly states that the product has been designed and qualified for the consumer market only.