IRFI4020H-117PXKMA1

FET, MOSFET Arrays Overview

The IRFI4020H-117P is a dual N-channel Digital Audio MOSFET half-bridge in a TO-220 FullPak package. It features a maximum drain-source voltage of 200 V and a typical on-resistance of 80 mΩ at 10 V gate drive. The device has a total gate charge of 19 nC, switch charge of 6.8 nC, and internal gate resistance of 3.0 Ω. Continuous drain current is 9.1 A at 25°C case temperature, with power dissipation up to 21 W. Junction temperature ranges from -55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge configuration reduces component count and facilitates PCB layout
• Optimized low gate charge and reverse recovery characteristics for improved THD and efficiency
• Internal gate resistance designed for Class-D audio amplifier stability

FET, MOSFET Arrays Applications

• Class-D audio amplifier half-bridge stages
• High-efficiency digital audio power amplification
• Low EMI audio output stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact marking and packaging details. Ensure the procurement channel provides valid traceability for this discrete semiconductor component. Confirm that the received part matches the specified TO-220 FullPak physical dimensions and pinout.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a pre-matched N-channel half-bridge pair. The integrated design ensures matched switching characteristics between the high-side and low-side switches. Verify that the required drain-source voltage exceeds the circuit's peak operating voltage and that thermal management can handle the specified power dissipation limits.

FET, MOSFET Arrays Part Context

This device belongs to the StrongIRFET family of digital audio MOSFETs. It combines two power switches into a single lead-free package to minimize parasitic inductance. The technology focuses on optimizing parameters critical for audio fidelity, such as reverse recovery charge and gate charge, rather than raw switching speed alone.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 200V rating, TO-220 FullPak 5-pin footprint, and dual N-channel configuration. Verify that any substitute maintains similar gate charge and on-resistance values to preserve the original amplifier's performance characteristics.

FET, MOSFET Arrays FAQ

What is the purpose of the internal gate resistance?

The internal gate resistance is optimized to control switching speed and prevent oscillation in Class-D audio amplifier configurations.

How does the half-bridge integration benefit PCB layout?

Integrating both switches minimizes the loop area between them, reducing parasitic inductance and simplifying the high-current path routing on the board.

What is the maximum continuous drain current?

The maximum continuous drain current is 9.1 A when the case temperature is maintained at 25°C.