IRFI4024H-117P

Description：MOSFET 2N-CH 55V 11A TO220-5
Series：-

SKU:5a8a2db29323 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRFI4024H-117P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 55V 11A TO220-5. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRFI4024H-117P

Description：MOSFET 2N-CH 55V 11A TO220-5
Series：-
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：11A
Rds On (Max) @ Id, Vgs：60mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id：4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：320pF @ 50V
Power - Max：14W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-5 Full Pack
Supplier Device Package：TO-220-5 Full-Pak
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRFI4024H-117P

IRFI4024H-117P

FET, MOSFET Arrays Overview

The IRFI4024H-117P is a digital audio MOSFET half-bridge designed for Class D amplifier applications. It integrates two N-channel power MOSFET switches in a TO-220 Full-Pak 5-pin package. Key electrical parameters include a drain-to-source voltage (VDS) of 55V, typical on-resistance (RDS(ON)) of 48mΩ at 10V, and typical gate charge (Qg) of 8.9nC. The device supports continuous drain current up to 11A at 25°C case temperature and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Integrated half-bridge package reduces component count by half
Optimized low RDS(ON) for improved efficiency
Low Qg and Qsw values enhance THD performance
Low Qrr characteristics reduce electromagnetic interference

FET, MOSFET Arrays Applications

Class D audio amplifier circuits
Full-bridge amplifier configurations delivering up to 100W per channel into 6Ω loads
Digital audio power stages requiring optimized PCB layout

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix '117' corresponds to the required lead form option for your assembly process. Confirm that the 55V rating aligns with your system's supply voltage headroom. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under free air conditions. Cross-reference the pinout diagram against your schematic to prevent mounting errors during integration.

FET, MOSFET Arrays Selection Notes

Select this component when designing compact Class D amplifiers where space constraints limit discrete half-bridge implementations. The integrated internal gate resistance simplifies driver design. Consider the 55V breakdown voltage limit when choosing supply rails. Evaluate the thermal dissipation requirements based on the 14W maximum power dissipation rating at 25°C case temperature.

FET, MOSFET Arrays Part Context

This device belongs to Infineon's Digital Audio MOSFET family, specifically engineered for high-efficiency audio power conversion. It replaces multiple discrete components with a single packaged solution. The TO-220 Full-Pak format provides robust mechanical stability and thermal conductivity suitable for through-hole mounting in consumer audio equipment.