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IRFN214BTA is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 250V. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRFN214BTA
- Description：MOSFET N-CH 250V
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRFN214BTA
FET, MOSFET Arrays Overview
The IRFN214BTA is a 250V N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor using planar DMOS technology. It features a TO-92-3 surface-mount package with a maximum continuous drain current of 2.2A and a gate threshold voltage range of 2V to 4V. The device exhibits a maximum on-resistance of 2.0Ω at VGS=10V and supports a single-pulse avalanche energy rating of 180mJ. Operating within a temperature range of -55°C to 150°C, it is designed for high-efficiency switching applications in DC/DC converters and switch-mode power supplies.
FET, MOSFET Arrays Feature Summary
- Utilizes proprietary planar DMOS technology for enhanced performance
- Capable of withstanding specified avalanche energy levels
- Designed for direct integration with integrated circuit gate drives
FET, MOSFET Arrays Applications
- High efficiency switching DC/DC converters
- Switch mode power supplies
- Motor drivers
- Relay drivers
FET, MOSFET Arrays Procurement Notes
Verify the specific manufacturer origin, as the IRFN214BTA designation may appear under Fairchild or ON Semiconductor due to corporate acquisitions. Confirm that the component matches the exact TO-92-3 surface-mount form factor required for the target PCB layout. Ensure the datasheet version aligns with the intended electrical specifications, particularly regarding the 2.0Ω on-resistance and 250V breakdown voltage ratings.
FET, MOSFET Arrays Selection Notes
Select this component when a compact surface-mount N-Channel MOSFET is required for low-current switching applications up to 2.2A. The TO-92-3 package offers a space-saving alternative to through-hole options while maintaining robust thermal characteristics. Consider the 2.0Ω on-resistance for efficiency calculations in low-power circuits where voltage drop is acceptable.
FET, MOSFET Arrays Part Context
This part belongs to the IRF214 series of 250V N-Channel Power MOSFETs, which includes variants such as the IRFR214 (TO-252AA) and IRFU214 (TO-251AA). While sharing similar electrical characteristics like the 2.0Ω on-resistance and 250V rating, the IRFN214BTA is distinct in its TO-92-3 surface-mount packaging, catering to different assembly requirements compared to the larger packages of its siblings.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include the IRFR214 and IRFU214, provided the mechanical footprint difference between TO-92-3 and TO-252AA/TO-251AA is accommodated. Verify pinout compatibility and ensure the replacement package can handle the required thermal dissipation for the specific application.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
