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IRFP243 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFP243
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：220mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1275 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IRFP243
Single FETs, MOSFETs Overview
The IRFP243 is an N-channel power MOSFET manufactured by Harris Corporation. It features a drain-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 8.8 A at case temperature. The device has a maximum on-resistance (Rds(on)) of 280 mΩ at Vgs = 10 V and Id = 8 A. Key electrical parameters include a gate charge (Qg) of 59 nC @ 10 V, input capacitance (Ciss) of 1300 pF @ 25 V, and a threshold voltage (Vgs(th)) of 4 V @ 250 µA. It dissipates 125 W with case cooling and operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode silicon MOSFET technology
- High avalanche energy capability guaranteed in breakdown mode
- Flange mount package for efficient thermal dissipation
Single FETs, MOSFETs Applications
- Power switching circuits
- DC-DC converters
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer datasheet for specific ordering suffixes and exact electrical tolerances. Confirm package compatibility with TO-204AA/TO-3 specifications. Ensure thermal management solutions align with the 125W case dissipation rating. Check for RoHS compliance status if required by project standards. Validate pinout configurations against the official Harris Corporation documentation before integration.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage DC switching applications requiring robust avalanche performance. The TO-3 flange mount package suits designs needing direct heatsink mounting. Compare Rds(on) and Qg values against alternative MOSFETs for efficiency optimization. Ensure gate drive voltage meets the 10 V requirement for optimal conduction. Consider thermal resistance characteristics for system-level heat sink design.
Single FETs, MOSFETs Part Context
This part belongs to the Harris Corporation power MOSFET family, specifically designed for high-power discrete semiconductor applications. It shares architectural similarities with other Harris N-channel devices like the IRF244 but offers specific voltage and current ratings tailored for industrial power electronics. The TO-3 package provides mechanical stability for high-current scenarios.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with IRF244 for similar N-channel specifications. Verify pinout and thermal interface compatibility when substituting. Ensure replacement parts meet the 250 V and 8.8 A requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
