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IRFP4468PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 195A TO247AC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFP4468PBF
- Description：MOSFET N-CH 100V 195A TO247AC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 180A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：540 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19860 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：520W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247AC
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IRFP4468PBF
Single FETs, MOSFETs Overview
The IRFP4468PbF is a StrongIRFET™ Power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It features a PG-TO247-3 package and supports an operating temperature range of -55°C to +175°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 100 V, a maximum on-state resistance (Rds(on)) of 2.6 mΩ at Vgs=10 V, and a continuous drain current (Id) of 195 A at 25°C case temperature. The device exhibits a total gate charge (Qg) of 363 nC and an output capacitance (Coss) of 149 nC.
Single FETs, MOSFETs Feature Summary
- Fully qualified according to JEDEC standards for industrial applications
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Lead-free plating compliant with RoHS and IEC61249-2-21 halogen-free requirements
Single FETs, MOSFETs Applications
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply systems
- Hard switched and high frequency circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and marking specifications. Confirm that the component meets all required environmental certifications, including RoHS compliance and lead-free status, prior to final procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust industrial-grade performance and low conduction losses. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Validate that the gate drive circuitry can handle the total gate charge requirements for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the StrongIRFET™ family, representing Infineon's advanced silicon MOSFET technology. It is engineered to deliver superior reliability and efficiency compared to standard MOSFETs, specifically targeting demanding industrial environments where long-term stability and ruggedness are critical design constraints.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical characteristics and thermal limits.
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