IRFR010PBF-BE3

$0.92

Description：MOSFET N-CH 50V 8.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:d89d2664714e Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR010PBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 50V 8.2A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR010PBF-BE3

Description：MOSFET N-CH 50V 8.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR010PBF-BE3

IRFR010PBF-BE3

Single FETs, MOSFETs Overview

The IRFR010PBF-BE3 is a Vishay Siliconix N-channel power MOSFET in a DPAK (TO-252) surface-mount package. It features a 50 V drain-source voltage rating and an 8.2 A continuous drain current at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.20 Ω at VGS = 10 V, with a total gate charge of 10 nC. Thermal performance includes a junction-to-case resistance of 5.0 °C/W and a maximum power dissipation of 25 W at 25 °C. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low drive current requirements for efficient switching control
Fast switching characteristics suitable for high-frequency applications
Excellent temperature stability of electrical parameters
Ease of paralleling for increased current handling capability

Single FETs, MOSFETs Applications

DC-to-DC converters
Telecommunication equipment
Computers and peripherals
Consumer products requiring limited heat dissipation

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with lead-free and halogen-free material standards. Ensure the selected package variant matches the required PCB footprint dimensions. Cross-reference the absolute maximum ratings with the intended operating conditions to prevent thermal overstress during procurement validation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-state resistance within a 50 V voltage window. Evaluate the thermal management strategy based on the specified junction-to-case resistance and linear derating factor. Confirm that the gate drive circuitry can supply the necessary voltage levels to achieve the minimum on-resistance specifications effectively.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR series of surface-mount power MOSFETs manufactured by Vishay Siliconix. The series utilizes advanced silicon technology to achieve low on-state resistance combined with high transconductance. The DPAK package provides a robust solution for high-volume applications where board surface mounting is preferred over through-hole technologies.