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IRFR120TRPBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 7.7A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFR120TRPBF-BE3
- Description：MOSFET N-CH 100V 7.7A DPAK
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：270mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 42W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IRFR120TRPBF-BE3
Single FETs, MOSFETs Overview
The Vishay Siliconix IRFR120TRPBF-BE3 is a third-generation N-channel power MOSFET housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current capacity of 7.7 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.27 Ω at a gate-source voltage of 10 V, with a total gate charge of 16 nC. Thermal performance includes a junction-to-case resistance of 3.0 °C/W and a maximum power dissipation of 42 W at 25 °C. The component supports an operating junction temperature range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Repetitive avalanche rated for ruggedized operation
- Includes dynamic dV/dt rating for high-speed switching applications
- Designed for ease of paralleling in multi-device configurations
Single FETs, MOSFETs Applications
- Surface-mount power switching circuits using vapor phase, infrared, or wave soldering
- High-frequency power conversion systems requiring fast switching characteristics
- Applications necessitating repetitive avalanche energy handling
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm manufacturing location and compliance status. Confirm that the requested variant matches the required lead-free and halogen-free specifications. Ensure compatibility with standard DPAK footprint dimensions during procurement planning.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V N-channel MOSFET with low on-resistance and robust avalanche capability is required. Evaluate thermal management requirements based on the specified junction-to-case resistance. Consider the gate charge parameters for driver circuit design in high-speed switching environments.
Single FETs, MOSFETs Part Context
This part belongs to the IRFR series of third-generation power MOSFETs from Vishay Siliconix. The series combines fast switching speeds with low on-resistance and cost-effectiveness. The DPAK package is specifically engineered for surface mounting techniques, providing a compact solution for power electronics designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package type to ensure functional equivalence.
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