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IRFR13N20DTRLP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 13A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFR13N20DTRLP
- Description：MOSFET N-CH 200V 13A DPAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：235mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：830 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IRFR13N20DTRLP
Single FETs, MOSFETs Overview
The IRFR13N20DTRLP is an N-channel power MOSFET manufactured by Infineon Technologies, utilizing HEXFET technology. It features a 200V drain-source voltage rating and is housed in a TO-252 (DPAK) surface-mount package. The device is optimized for switch-mode power supply (SMPS) applications, offering low gate charge to minimize switching losses. Key electrical characteristics include a maximum continuous drain current of 11A and a maximum power dissipation of 75W at 25°C ambient temperature.
Single FETs, MOSFETs Feature Summary
- HEXFET technology designed for high-efficiency switching performance
- Low gate charge capability to reduce switching energy loss
- Lead-free product designation indicated by the 'P' suffix
Single FETs, MOSFETs Applications
- Switch-mode power supplies (SMPS)
- High-frequency DC-DC converters
- Telecommunications 48V input forward converters
Single FETs, MOSFETs Procurement Notes
Verify the component authenticity against official Infineon documentation. Confirm that the ordering suffix corresponds to the specific lead-free tape-and-reel packaging configuration. Ensure the part number matches the exact HEXFET generation required for your circuit design specifications before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a 200V breakdown voltage with moderate current handling capabilities. It is suitable for applications where minimizing switching losses is critical but extreme high-frequency operation is not the primary constraint. Evaluate thermal management requirements based on the specified power dissipation limits.
Single FETs, MOSFETs Part Context
This part belongs to the IRFR series of N-channel power MOSFETs from Infineon Technologies. The series utilizes planar strip HEXFET technology to achieve superior on-resistance and switching speed compared to standard planar designs. The DPAK package provides a balance between thermal performance and compact footprint for industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 200V rating, TO-252 package dimensions, and electrical parameters such as RDS(on) and Qg.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
