Single FETs, MOSFETs IRFR3504ZTRPBF product image

IRFR3504ZTRPBF

  • Description:MOSFET N-CH 40V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:71113a097149 Category: Brand:

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IRFR3504ZTRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR3504ZTRPBF

  • Description:MOSFET N-CH 40V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1510 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):90W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR3504ZTRPBF

IRFR3504ZTRPBF

Single FETs, MOSFETs Overview

The IRFR3504ZTRPBF is a HEXFET N-channel power MOSFET in a D-Pak (TO-252) package. It features a 40V drain-source breakdown voltage and an ultra-low on-resistance of 9.0mΩ maximum at VGS=10V. The device supports a continuous drain current of 42A at 25°C case temperature and handles pulsed currents up to 310A. It operates with a junction temperature range from -55°C to +175°C, offers fast switching speeds, and allows repetitive avalanche operation.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced HEXFET processing technology to achieve extremely low on-resistance per silicon area.
  • Designed for high thermal performance with a maximum operating junction temperature of 175°C.
  • Capable of fast switching speeds suitable for high-frequency applications.
  • Supports repetitive avalanche energy ratings up to the maximum junction temperature.

Single FETs, MOSFETs Applications

  • Industrial motor control systems
  • High-efficiency DC-DC converters
  • Power management circuits requiring robust avalanche handling

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required tape-and-reel packaging configuration. Confirm the component meets lead-free manufacturing standards as specified by the manufacturer. Ensure the procurement channel provides valid traceability documentation for industrial-grade components.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V rating and low conduction losses are critical. Evaluate the thermal resistance characteristics against the system's heat dissipation capabilities. Consider the gate charge requirements for driver circuit design to optimize switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It is designed for industrial applications where reliability and efficiency are paramount. The D-Pak package provides a balance between current handling capability and surface-mount convenience.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and electrical parameters such as RDS(on), VDS, and package dimensions before substitution. Verify that any alternative device meets or exceeds the thermal and avalanche specifications required by the application.

Single FETs, MOSFETs FAQ

Is repetitive avalanche operation allowed for this device?

Yes, the datasheet specifies that repetitive avalanche operation is allowed up to the maximum junction temperature (Tjmax).

What is the maximum junction temperature?

The maximum operating junction temperature is 175°C.

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