IRFR5505TRR

$0.50

Description：MOSFET P-CH 55V 18A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:68f1b820e796 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRFR5505TRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 18A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR5505TRR

Description：MOSFET P-CH 55V 18A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：650 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：57W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR5505TRR

IRFR5505TRR

Single FETs, MOSFETs Overview

The IRFR5505TRR is a P-Channel Power MOSFET from the Fifth Generation HEXFET family, manufactured by Infineon Technologies. It features an ultra-low on-resistance of 0.11Ω and supports a continuous drain current of -18A at 25°C case temperature. The device has a drain-to-source breakdown voltage of -55V and a maximum gate-to-source voltage of ±20V. It utilizes a D-Pak (TO-252AA) surface-mount package with a thermal resistance junction-to-case of 2.2°C/W. Key electrical parameters include a total gate charge of 32nC, a single pulse avalanche energy rating of 150mJ, and a power dissipation capacity of 57W.

Single FETs, MOSFETs Feature Summary

Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area for high efficiency.
Features fast switching speed combined with a ruggedized device design for reliable operation.
Fully rated for unclamped inductive switching (UIS) applications to handle avalanche stress.

Single FETs, MOSFETs Applications

General-purpose power switching circuits
DC-DC converter topologies
Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Ensure compliance with relevant environmental directives applicable to your region before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a robust P-Channel MOSFET with proven avalanche capability is required. It is suitable for designs prioritizing thermal performance and ruggedness over ultra-high frequency switching speeds. Consider the 0.11Ω on-resistance for conduction loss calculations and ensure the gate drive voltage aligns with the specified threshold characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET series originally developed by International Rectifier, now part of Infineon Technologies. The IRFR5505 variant specifically denotes the surface-mount D-Pak package configuration, distinguishing it from the straight-lead IRFU5505 version while sharing identical internal die characteristics.