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IRFR6215PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 150V 13A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFR6215PBF
- Description：MOSFET P-CH 150V 13A DPAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：295mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IRFR6215PBF
Single FETs, MOSFETs Overview
The IRFR6215PBF is a P-channel power MOSFET from the Fifth Generation HEXFET series by Infineon Technologies. It features a D-Pak (TO-252AA) surface-mount package with a drain connected to the exposed pad. Key electrical parameters include a drain-source breakdown voltage of -150 V, a continuous drain current of -13 A at 25°C case temperature, and a maximum on-resistance of 0.295 Ω at VGS = -10 V. The device supports an operating junction temperature range of -55°C to +175°C and offers a single pulse avalanche energy rating of 310 mJ.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced processing techniques for low on-resistance per silicon area
- Fast switching speed combined with ruggedized device design
- Fully rated for unclamped inductive switching applications
- Lead-free product qualified to consumer-level standards
Single FETs, MOSFETs Applications
- DC/DC converters
- Motor control circuits
- Power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging format. Standard packs are available in tubes of 75 units or tape and reel quantities of 3000 units. Confirm that the component meets RoHS compliance requirements for the intended manufacturing process. Ensure thermal management designs account for the specified linear derating factor when operating above 25°C case temperature.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high efficiency and fast switching within a surface-mount form factor. The device is suitable for designs needing robust performance under inductive load conditions due to its avalanche rating. Consider the thermal resistance characteristics and PCB mounting recommendations for optimal heat dissipation. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET Power MOSFET family, which integrates N-channel and P-channel devices designed for various power supply needs. The fifth-generation technology focuses on minimizing conduction losses while maintaining rapid switching capabilities. This specific model represents the P-channel variant optimized for surface-mount assembly in compact electronic systems.
Single FETs, MOSFETs Replacement Considerations
The IRFU6215PBF serves as a leaded through-hole alternative within the same electrical specification family. Both components share identical core performance metrics but differ in physical package type and mounting method.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
