IRFR9110TR

$1.16

Description：MOSFET P-CH 100V 3.1A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:33d9a4f79a6a Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR9110TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 100V 3.1A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR9110TR

Description：MOSFET P-CH 100V 3.1A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR9110TR

IRFR9110TR

Single FETs, MOSFETs Overview

The IRFR9110TRPBF is a P-Channel power MOSFET from Vishay Siliconix, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage of -100 V and a continuous drain current of -3.1 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 1.2 Ω at VGS = -10 V and a total gate charge of 8.7 nC. It supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 25 W.

Single FETs, MOSFETs Feature Summary

Fast switching capability for efficient power control
Ruggedized design rated for repetitive avalanche energy
Dynamic dV/dt rating for high-speed applications

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor drive systems
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance requirements and manufacturing location. Confirm that the requested package variant matches the required thermal and mechanical specifications for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a single-channel P-Channel MOSFET with moderate current handling capabilities. Ensure the gate drive voltage aligns with the specified threshold characteristics and verify that the PCB layout accommodates the DPAK package dimensions and thermal pad requirements.

Single FETs, MOSFETs Part Context

This part belongs to the third-generation power MOSFET series from Vishay Siliconix. It is designed to provide a balance of fast switching performance, low on-resistance, and cost-effectiveness. The DPAK package facilitates surface mounting using standard vapor phase, infrared, or wave soldering techniques.