ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRFSL4321PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 85A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFSL4321PBF
- Description：MOSFET N-CH 150V 85A TO262
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4460 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IRFSL4321PBF
Single FETs, MOSFETs Overview
The IRFSL4321PBF is a single N-channel HEXFET power MOSFET in a TO-262 (I2PAK) package. It features a maximum drain-source voltage of 150V and a continuous drain current of 85A at 25°C case temperature, limited to 75A by the package. The device has a maximum on-resistance of 15mΩ at 10V gate drive and a total gate charge of 71nC. Thermal resistance from junction to case is 0.45 K/W, with a maximum operating junction temperature of 175°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance reduces conduction losses
- Low gate charge improves switching performance
- Improved diode recovery enhances switching and EMI performance
- 30V gate voltage rating improves robustness
Single FETs, MOSFETs Applications
- Motion control applications
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply
- Hard switched and high frequency circuits
Single FETs, MOSFETs Procurement Notes
Verify the component matches the exact part number IRFSL4321PBF. Confirm the package type is TO-262 (I2PAK). Ensure the manufacturer is Infineon Technologies or International Rectifier. Check for lead-free marking 'PbF' on the package. Validate datasheet version against official sources.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 150V blocking capability and high current handling up to 85A. Consider the TO-262 package for through-hole mounting. Evaluate thermal management needs based on the 0.45 K/W junction-to-case resistance. Verify gate drive requirements align with the 15mΩ on-resistance specification at 10V.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed for industrial market applications. The product is qualified according to specific standards available on the manufacturer's website. It represents a standard solution for medium-power switching applications.
Single FETs, MOSFETs Replacement Considerations
Check for pin-compatible alternatives within the same HEXFET series. Verify that any substitute meets the 150V VDS and 15mΩ RDS(on) specifications. Ensure the replacement package matches TO-262 dimensions. Confirm thermal characteristics are equivalent.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
