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IRFU4105ZPBF-IR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is HEXFET N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFU4105ZPBF-IR
- Description：HEXFET N-CHANNEL POWER MOSFET
- Series：HEXFET®
- Mfr：International Rectifier
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：24.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK (TO-251AA)
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for IRFU4105ZPBF-IR
Single FETs, MOSFETs Overview
The IRFU4105ZPBF-IR is a single N-channel silicon power MOSFET from the HEXFET family, manufactured by International Rectifier (Infineon). It features a TO-251AA (I-Pak) lead-free plastic package with three terminals. The device is rated for a drain-source voltage of 55 V and a continuous drain current of 30 A. Its maximum on-resistance is specified at 0.0245 Ω. The component supports an operating junction temperature up to 175°C and includes a built-in body diode.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced HEXFET process technology to achieve ultra-low on-resistance per silicon area.
- Capable of repetitive avalanche energy ratings up to the maximum junction temperature.
- Features fast switching characteristics suitable for high-frequency applications.
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Synchronous rectification circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify that the ordering suffix matches the required tape-and-reel configuration if automated assembly is intended. Confirm the specific manufacturer lot code against the datasheet revision history to ensure compliance with material declarations. Check for any recent product change notices regarding packaging or pinout modifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage, high-current switching. The TO-251AA package offers thermal performance comparable to larger packages while maintaining a small footprint. Ensure the application's gate drive voltage aligns with the threshold requirements for optimal conduction efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the IRFR/U4105 series of automotive-grade power MOSFETs. It shares electrical specifications with the IRFR4105ZPbF but utilizes the I-Pak (TO-251AA) package instead of the DPAK (TO-252AA). Both variants are designed for rugged industrial and automotive environments requiring high reliability.
Single FETs, MOSFETs Replacement Considerations
The IRFR4105ZPbF serves as a direct functional equivalent with identical electrical parameters, differing only in the physical package type (DPAK vs. I-Pak). Verify board space constraints and thermal dissipation paths when substituting between these package styles.
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