IRFZ46ZL

Description：MOSFET N-CH 55V 51A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:5a5e52d8a4d5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFZ46ZL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 51A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ46ZL

Description：MOSFET N-CH 55V 51A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13.6mOhm @ 31A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1460 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：82W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRFZ46ZL

IRFZ46ZL

Single FETs, MOSFETs Overview

The IRFZ46ZLPBF is a HEXFET N-channel power MOSFET manufactured by Infineon Technologies. It features a TO-262 (TO-262AB) through-hole package and utilizes advanced silicon processing to achieve low on-resistance per unit area. The device supports a maximum drain-source voltage of 55V and a continuous drain current of 51A at 25°C case temperature. Key electrical parameters include a maximum static drain-to-source on-resistance of 13.6mΩ, a total gate charge of 31nC, and a maximum power dissipation of 82W. It operates with a junction temperature range up to 175°C.

Single FETs, MOSFETs Feature Summary

Advanced process technology enables ultra-low on-resistance for high efficiency.
Fast switching characteristics combined with dynamic dv/dt rating.
Capable of repetitive avalanche operation up to the maximum junction temperature.

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power switching applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Infineon datasheets before integration. Confirm that the specific ordering suffix matches the required lead-free status and package variant. Ensure design margins account for thermal resistance values under actual mounting conditions. Check for end-of-life notifications or alternative sourcing options if long-term supply stability is required.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with moderate voltage ratings and high current capability is needed. The TO-262 package facilitates effective heat dissipation for through-hole mounting. Consider the 13.6mΩ on-resistance for conduction loss calculations and the 31nC gate charge for driver selection in switching frequency designs.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents an evolution of standard MOSFET designs optimized for industrial markets. The 'ZL' suffix indicates the specific lead-free TO-262 package configuration within the broader IRFZ46 product line.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for qualified alternatives. Verify pinout compatibility and ensure replacement parts meet or exceed the 55V breakdown voltage and 51A current requirements.

Single FETs, MOSFETs FAQ

Is the IRFZ46ZLPBF suitable for automotive applications?

No, the datasheet specifies that this product has been designed and qualified for the Industrial market. Automotive qualified versions are listed separately.