IRFZ48NSTRR

$1.00

Description：MOSFET N-CH 55V 64A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:e9ac446a4294 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFZ48NSTRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 64A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ48NSTRR

Description：MOSFET N-CH 55V 64A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1970 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 130W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFZ48NSTRR

IRFZ48NSTRR

Single FETs, MOSFETs Overview

The IRFZ48NSTRR is a single N-channel power MOSFET manufactured by Infineon Technologies, utilizing advanced HEXFET processing techniques. It features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 64 A at case temperature of 25°C. The device exhibits a typical on-resistance (Rds(on)) of 13 mΩ at a gate-source voltage of 10 V. Packaged in the D2PAK surface-mount format, it supports a junction temperature range from -55°C to +175°C with a maximum power dissipation of 130 W at case temperature.

Single FETs, MOSFETs Feature Summary

Advanced HEXFET processing technology for optimized performance
Low on-resistance for efficient power switching
Robust avalanche capability for rugged operation

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with Infineon or authorized distributors, as lifecycle statuses for older HEXFET packages may vary. Confirm that the D2PAK footprint matches the target PCB design requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required in a surface-mount D2PAK package. Ensure thermal management solutions can handle the specified power dissipation limits under the intended operating conditions and ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the legacy HEXFET family from International Rectifier, now part of Infineon Technologies. It represents an earlier generation of silicon power MOSFETs designed for general-purpose power switching applications where cost-effective performance was prioritized.